Topics in Applied Physics Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications Book 124 (Paperback)

1.Introduction and overview. Kevin O DONNELL Strathclyde UK. 2.Theoretical background. Robert JONES Exeter and Benjamin HOURAHINE Strathclyde UK. 3.In-situ doping of MBE III-N: RE epilayers. Andrew STECKL and John ZAVADA Nanolab Cincinatti USA. 4.RE implantation and annealing of III-Nitrides. Katharina LORENZ and Eduardo ALVEZ ITN Lisbon Portugal. 5.Lattice location studies of RE impurities in III-Nitrides. Andre VANTOMME IKS Leuven Belgium. 6.Microscopic characterisation of luminescent III-N: RE epilayers. Robert MARTIN Strathclyde UK 7.High-resolution optical studies of site multiplicity in III-N: RE. Volkmar DIEROLF Lehigh USA. 8.RE-doped III-N quantum dots. Bruno DAUDIN Grenoble France. 9.Excitation model for RE ions in solids. Alain BRAUD and Pierre RUTERANA Caen France. 10.III-N: RE electroluminescence. Andrew STECKL and John ZAVADA Nanolab Cincinatti USA. 11.RE-doped III-N for spintronics applications. Oliver BRANDT PDI Berlin Germany. 12.Summary and prospects for future work. Kevin O DONNELL Strathclyde UK.